Professor, Institute of Space and Astronautical Science, JAXA, Japan
Biography: Kazuyuki Hirose received his B.S. and M.S., and Ph.D. degrees in electronic Engineering from Waseda University, Japan, in 1981,1983, and 1990, respectively. He joined the Fundamental Research Laboratory, NEC Corporation, in 1983, where he was engaged in research on semiconductor physics such as thin film growth by molecular beam epitaxy (MBE) and electronic structures of semiconductor superlattices or metal/semiconductor interfaces. On the basis of the basic research, he succeeded in the development of a high-electron-mobility transistor (HEMT) of AlInAs/GaInAs/InP stuructures with highest speed among allFET in 1985. Kazuyuki joined the Institute of Space and Astronautical Science (ISAS) in 1995 as an associate professor. He has been engaged in research on basic research for semiconductor devices for space applications such as semiconductor physics, especially insulator/semiconductor interfaces, and radiation effects on semiconductor devices. On the basis of the basic research, he succeeded in the development of radiation hardened MPU with advanced commercial SOI technology. He won the Award of the Minister of Education, Culture, Sports, Science and Technology in 2012. He was a member of space exploration mission "HAYABUSA", which obtained mineral from an asteroid for the first time.
Speech Title: X-ray Photoelectron Spectroscopy Study on SiO2/Si interfaces of Advanced MOSFETs
Abstract: Physical properties at gate oxide/Si interfaces of advanced MOSFETs should be investigated in details for achieving high performance and high reliability. X-ray photoelectron spectroscopy (XPS) is a surface science tools with a high potentiality for such a purpose. The authors have developed evaluation techniques utilising XPS to revealed several important properties at ultra thin oxide/Si interfaces including structural transition layer, interface dipole, dielectric constant, oxide traps, and interface states. [1] In this presentation, first we explain fundamental principles of the x-ray time-dependent measurement technique we developed, followed by introduction of its application to evaluation of the interfaces states density and the oxide traps density at thin oxide/Si interfaces. Then, we show how XPS spectrum gives us optical dielectric constant at and near ultrathin SiO2/Si interfaces.
Keywords: XPS, SiO2/Si, oxide traps, interface states, dielectric constant